| 摘要 |
PURPOSE:To flatten a contact section, and to form the multilayer wiring of high reliability by attaching silicon nitride only to the side wall of a hole, which must be used as a contact hole, and completely burying the hole by using a selective growth method. CONSTITUTION:A wiring pattern is formed to an inter-layer insulating film 22 on a wafer 21 by a metallic film for wiring a first layer (a lower layer) or a silicon film, etc. 23, and an inter-layer insulating film 24 is attached. A resist mask 25 is applied, the hole 30 and the hole 30' are bored, and the resist mask 25 is removed. A silicon nitride film 26 is attached, the silicon nitride film 26 is left and attached to an inclined plane in the hole 30' through etching, and a silicon film 27 is deposited selectively. The silicon film 27 fills the role of connecting the lower layer wiring film 23 to upper layer wiring while flattening the surface of the insulating film 24, and brings the high reliability of multilayer wiring structure. A metallic film is attached, a wiring pattern is formed, and an upper layer wiring layer 28 is formed as well. |
