| 摘要 |
PURPOSE:To stably obtain a silicon layer with good reproducibility, high withstand voltage and reliability by replacing reaction gas with inactive gas and by allowing the reaction gas to flow only when a semi-insulating polycrystalline silicon layer is generated in the reaction gas system. CONSTITUTION:An inactive gas supplied from pipe line 1 is carrier gas of reaction gas of pipe lines 2 and 3, the one reaction gas such as silane gas reacts with the reaction gas such as oxygen within the furnace core tube of reaction furnace generating a semi-insulating polycrystalline silicon layer on single crystal silicon semiconductor substrate and it flows inside of furnace core tube and entire part of reaction furnace together with the carrier gas. Usually, the gas system of reaction gas allows inactive gas to inflow from the pipe line 1 when the valve 4 opens and to be exhausted through the valve 7. Therefore, the reaction gas is replaced with inactive gas. The other reaction gas reacts before entering the furnace core tube when both reaction gases are mixed before entering the furnace core tube. Therefore, the other reaction gas is allowed to flow into the furnace core tube separately from the carrier gas and the one reaction gas. |
