| 摘要 |
PURPOSE:To block the fluctuation of ratio of composition and the breakdown of a gate insulation film and thus improve the uniformity of mutual conductances and threshold voltages, by introducing a protection film for avoidance of shocks by hydrogen plasma. CONSTITUTION:The first metallic layer 2 and a gate insulation film 3 are formed on an insulating substrate 1, then the first amorphous Si layer 4a is adhered by an adhesion method wherein hydrogen plasma does not generated, and thereafter hydrogenation is performed. After the second amorphous Si layer 4b is adhered by the glow discharge or arc discharge decomposition of silane gas, the first and second amorphous Si layers are left in an island form 4, and accordingly a MOS transistor is completed by forming the source and drain 5 and 6 and source and drain wirings 7 and 8. The film quality of the gate insulation film 3 is not deteriorated, since the first amorphous Si layer 4a protects the gate insulation film 3 as a protection film at the time of deposition of the second amorphous Si layer 4b which contains a large amount of hydrogen plasma in the atmosphere of reaction. |
