| 摘要 |
PURPOSE:To reduce the number of processes while decreasing the number of masks required by forming a contact to a polysilicon layer through self-alignment. CONSTITUTION:When a residual resist pattern 25 is removed and the whole is oxidized in an oxidizing atmosphere, an SiO2 film 28 is formed to the whole surface except a residual molybdenum layer 24. A molybdenum silicide is formed near the interface with polysilicon of the molybdenum layer 24 at that time. On the other hand, the surface of the molybdenum layer 24 is oxidized, but molybdenum oxide evaporates at a temperature of normal oxidation because of its high vapor pressure. The surface of the molybdenum layer 24 after oxidation is brought to the state in which molybdenum is exposed. Since both ends of polysilicon or metallic wiring 29 are connected to the molybdenum layers 24, a polysilicon gate electrode 26 and polysilicon wiring 27 are connected mutually by polysilicon or the metallic wiring 29, and formed onto the SiO2 film 28. |
