| 摘要 |
PURPOSE:To eliminate the adverse influence due to the difference of thermal expansion coefficients between an active layer and a substrate by epitaxially growing a crystal growing substrate and forming it thinly. CONSTITUTION:A clay layer 12 made of P type Ga0.3Al0.7As, an active layer 13 made of P type Ga0.7Al0.3As, a clad layer 14 made of Ga0.3Al0.7As and a cap layer 15 made of N type Ga0.85Al0.15As are grown on a P type GaAs substrate 11 to form a polycrystalline structure. Then, the back surface of the substrate 11 is etched to reduce the thickness of the substrate 11. An Al2O3 insulating film 16 is covered to concentrate a current on the etching surface of the substrate 11, part is removed in a stripe shape as a current passage 19. A P-side electrode 17 made of Mo-Au metal is formed on the layer 15, and an N-side electrode 18 made of Au-Ge-Ni metal is formed on the film 15. |
