| 摘要 |
PURPOSE:To isolate between elements by simultaneously performing the etching of an SiO2 film and the growth of an Si single crystal layer in high vacuum to form an element region, thereby preventing the disconnection of an electrode and the contamination of the surface of a substrate. CONSTITUTION:An SiO2 film 22 is formed on a P<+> type Si substrate 21, and a hole 23 is formed at the part which corresponds to the element forming region. Then, the substrate 21 is held in high vacuum, and Si is deposited while doping boron or the like. At this time, P type Si single crystal layers 24, 25 are formed, and an SiO2 film 22 is etched. Then, a CVD oxidized film 27 is formed to bury a V-shaped groove 26, and a resist film 28 is further coated. Thereafter, the surfaces of the P type Si single crystal layer 25 and the remaining SiO2 film 22' are etched by an RIE method or the like to be exposed. In this manner, an element region in which elements are isolated flatly can be formed. |
