发明名称 |
Ohmic contact, especially for p-type gallium nitride, e.g. in LEDs, laser diodes, photodetectors and microelectronic components, is produced by metal thermal oxidation to form a p-type semiconductor oxide |
摘要 |
An ohmic contact is produced by metal thermal oxidation on a semiconductor material to form a p-type semiconductor oxide. Independent claims are also included for the following: (i) an ohmic contact to a semiconductor comprising a mixture of p-type semiconductor oxide and metal; and (ii) an ohmic contact to a semiconductor comprising a p-type semiconductor oxide layer and a conductive layer. Preferred Features: The semiconductor material is p-AlxGayInxN (x, y, z = 0 to 1 exclusive and x + y + z = 1) and the p-type semiconductor oxide is NiO, MnO, FeO, Fe2O3, CoO, CrO, Cr2O3, CrO2, CuO, Cu2O, SnO, Ag2O, CuAlO2, SrCu2O2, LaMnO3, YBa2Cu4O8 or PdO.
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申请公布号 |
DE19934031(A1) |
申请公布日期 |
2000.05.04 |
申请号 |
DE1999134031 |
申请日期 |
1999.07.21 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, CHUTUNG |
发明人 |
HUANG, CHAO-NIEN;CHIU, CHIENCHIA;CHEN, CHIN-YUAN;CHENG, CHENN-SHIUNG;SHIH, KWANG KUO;JONG, CHARNG-SHYANG;HO, JIN-KUO |
分类号 |
H01L21/28;H01L21/288;H01L29/43;H01L33/32;H01L33/40;H01S5/042;H01S5/323;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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