发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To unify longitudinal mode of a semiconductor laser by providing in parallel a plurality of laser resonators of different resonance lengths in the vicinity of one light waveguide. CONSTITUTION:N type GaAlAs layer 2, P type GaAs layer 3, P type AlGaAs layer 4 and P type GaAs layer 5 are sequentially laminated on an N type GaAs substrate 1 in a semiconductor laser, striped electrodes 20, 21 are aligned in parallel in the vicinity on the upper surface. Thus, resonators corresponding to the electrodes 20, 21 are formed on the layer 3. The laser lights which are generated from two resonators are electromagnetically operated to each other, the laser resonator of long side is oscillated in sole longitudinal mode of the laser resonator of short side, and the longitudinal modes of the output lights obtained from both the laser resonators becomes sole mode.
申请公布号 JPS58199586(A) 申请公布日期 1983.11.19
申请号 JP19820082696 申请日期 1982.05.17
申请人 TATEISHI DENKI KK 发明人 INOUE NAOHISA;MORI KAZUHIKO;MATANO MASAHARU;YAMASHITA MAKI
分类号 H01S5/00;H01S5/10;H01S5/40 主分类号 H01S5/00
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