| 摘要 |
PURPOSE:To form multilayer reflection reducing films at a low cost and to implement high efficiency in a solar cell, by forming a high refractive-index reflection reducing film, and further forming a low refractive-index reflection reducing film comprising Ti-Si-O on above described reflection reducing film by a continuous CVD method. CONSTITUTION:On a silicon substrate 1, a diffused layer 2, a back surface electric-field layer 3, an upper surface electrode 4 and a back electrode 5 are formed. With N2 gas as a carrier gas, tetraisopropyl titanate gas and steam can form a TiO2 film with refractive indexes of 2.3. With N2 gas as a carrier gas, monosilane and O2 gas can form an SiO2 film having refractive indexes of 1.45. A high refractive-index reflection reducing film 6a is formed. Then, a low refractive-index reflection reducing film 6b comprising Ti-Si-O as a synthesized material of TiO2 and SiO2 is formed. The refractive indexes of the reflection reducing films can be varied in the range of 1.45-2.3. For example, the reflection reducing films having a three-layer structure with the refractive indexes of 2.3, 2.0 and 1.6 can be formed. |
