发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To adjust the gate resistance value of each gate wiring by connecting plural divided gate wirings in parallel in such a way that number of minor loop differs from the individual wiring. CONSTITUTION:Gate peripheral part wirings 1a-4a are designed to the same width. When their resistance values are adjusted, the numbers n1-n4 of minor loops of minor loop blocks 8a-11a are so determined that n1>n2>n3>n4. Consequently, the wiring resistance values are adjusted easily and all wirings have the same desired width.
申请公布号 JPS58199486(A) 申请公布日期 1983.11.19
申请号 JP19820079999 申请日期 1982.05.14
申请人 HITACHI SEISAKUSHO KK 发明人 MATSUMOTO SHINZOU;HIROSHIMA MINORU;SEKINO MITSURU
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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