| 摘要 |
PURPOSE:To increase the damage strength of a protective diode without increasing the series resistors from a substrate to a junction by arranging a low density substrate on a line of P<+> type diffused region formed on a P type semiconductor substrate. CONSTITUTION:P<+> type diffused regions 8 of the same conductive type are formed on a P type semiconductor substrate, a low density substrate 7 is arranged on a line 15 of the region 8 which can be readily damaged, thereby alleviating the current which flows on the line 15 and preventing the concentration of an electric field of an electrostatic pulse. Since series resistors r from the substrate are arranged with P<+> at the periphery of the exposed part 19 of the substrate in a DC manner, they do not increase more than required, and can be controlled to suitable value by altering the size of the exposed part 19. In the drawing, an example of employing this invention can be employed in a protective diode between an N-ch, MIS-FET substrate and input, and can be employed similarly for a protective diode between P-ch, MIS-FET substrate and input. |
