| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor substrate for LCD using four masks and a thin film transistor substrate for LCD are provided to protect a gate pad and prevent efficiently a leakage current. CONSTITUTION: A method for manufacturing a thin film transistor substrate for LCD using four masks and a thin film transistor substrate for LCD comprises the following steps. A gate wiring(22) is formed on an insulated substrate by using a first mask. A quadruple layer including a gate insulation film, a semiconductor layer(42), a contact layer, and a data conductive layer is formed on the substrate by using a second mask. A conductive pattern(71,73,75,76,77) is formed on an upper portion of the data conductive layer and an area around the data conductive layer by using a third mask. A data wiring(68) is formed by etching the data conductive layer without the conductive pattern. The contact layer uncovered with the conductive pattern is etched. A protection film is formed by using a fourth mask. The semiconductor layer uncovered with the protection film is etched.
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