| 摘要 |
PURPOSE:To obtain the semiconductor wafer, the helf-width of an X-ray locking curve of a spinel oxide epitaxial film thereon can be held to degree 8 or less after thermal oxidation, by forming dioxide silicon to a boundary between a spinel oxide and a silicon single crystal through thermal oxidation. CONSTITUTION:Magnesia spinel of approximately 4mum film thickness is grown on a silicon single crystalline substrate of a 100 crystal face orientation on the basis of a formation reaction by using a gas group consisting of MgCl2, AlCl3, CO2, H2 and N2 gas through a vapor growth method. The epitaxial films having various different crystallinity are obtained by severally changing the conditions of growth, such as a transport velocity ratio of MgCl2 and AlCl3, the flow rate of carbonic acid gas, etc. at that time. Crystallinity is evaluated by the half-width of four hundred diffraction profiles of magnesia spinel through an X-ray locking diffraction method. Kalpha-Rays of copper generated from an X-ray source 1 through methods such as one crystal method are irradiated to a sample 3 through a collimator 2, and X-rays diffracted by irradiated to a sample 3 through a collimator 2, and X-rays diffracted by the sample are detected by a counter tube 4 fixed at 2theta to a Bragg diffraction angle theta of the sample. The half- width w of the sample is obtained bacause the sample turns in the vicinity of the Bragg angle theta and draws a diffraction profile 5 at that time. |
