| 摘要 |
PURPOSE:To easily form a high resistance layer having a high resistivity with less dispersion thereof by forming it by vapor growth method on the other side under the condition that the one side of Si substrate is protected by polycrystalline Si film and oxide film. CONSTITUTION:A polycrystalline Si film 2 not including impurity is deposited on both sides of an Si substrate 1. An oxide film 4 is then formed at the surface of film 2. Here, the film 4 and film 2 are removed so that a single side of substrate 1 on which a high resistance layer 5 is formed is exposed. With the film 2 and film 4 remaining in such a condition considered as the protection film, the epitaxial growth processing is executed to the exposed substrate surface 1a. Thereby, a high resistance layer 5 is formed and finally an epitaxial wafer 10 can be obtained. According to this method, impurity in the substrate 2 can be protected from external diffusion. Moreover, generation of defect on the laminated layers during the epitaxial growth processing can be prevented. Accordingly, a resistivity of layer 5 can be set to a high value with less dispersion. |
