| 摘要 |
PURPOSE:To obtain a single crystal film which does not generate any crack by irradiating ionized desired substance in the graphoepitaxy for causing a single crystal thin film to grow on amorphous material. CONSTITUTION:An amorphous layer 7 is formed on the surface of an Si substrate. Recess and extruded areas 8 are formed like a lattice at the surface of layer 7. Thereafter, silicon of ionized desired substance is irradiated to said lattice part 8. At this time, the Si particles are adhered to the lattice part 8 and simultaneously migration occurs due to an energy of movement. The layer is single-crystallized by the effect of lattice part and thereby the desired single crystal thin film 9 can be formed. Since this crystal, namely, single crystal thin film is obtained without a severe heating process such as laser annealing, any crack is not generated and dislocation may be rare. |
