| 摘要 |
PURPOSE:To obtain the entitled photoreceptor high in specific resistivity, and sensitivity, and low in residual potential, by forming an Se-Bi photosensitive layer contg. a specified content of Bi on a conductive substrate. CONSTITUTION:A bell jar 1 contg. a crucible contg. Se, a box-shaped boat contg. Bi, and a conductive substrate 7 supported by a holder 6 is evacuated through an exhaust pipe to <=5X10<-5>Torr. The substrate 7 is controlled to a desired temp. by a warm water temp. controller 5, the crucible 3 is heated to 290-330 deg.C, and the boat 4 to 500-700 deg.C to evaporate Se and Bi To deposit a 40-60mum thick Se-Bi photosensitive layer contg. 0.1-0.4atm% Bi in vacuum, and vapor deposition is stopped by closing a shutter 8. The Se-Bi electrophotographic receptor thus obtained has >=1X10<13>ohm.cm specific resistivity and >=20V residual potential. |
