| 摘要 |
PURPOSE:To obtain a laser with even oscillating condition at low threshold value by a method wherein, at a laser with lateral junction stripes (TSJ), multiple P layers are provided at specified interval in N layer along pn junction to make injection distribution into the P-N junction even. CONSTITUTION:A Ga0.5A0.5As layer 2, Ga0.9A0.1As active layer 3 and Ga0.5A0.5 As layer 4 are laminated on semiinsulated GaAs substrate 1. The forbiden band width of the active layer 3 is narrower than those of the layers 2, 4. The P layer 13 with width (b) and edge at specified distance (a) from P-N junction 11 are provided at specified interval placed in the direction along a resonator. The layer 13 divides injected current reducing the unevenness in the direction along the resonator to hold less threshold value current. In such a constitution, the laser oscillation with stable and single mode may be obtained at low threshold value. |
