| 摘要 |
PURPOSE:To eliminate disconnection in the bonding pad by providing a water proof conductive layer just under a metal electrode for metal lead wire connection provided on a semiconductor substrate. CONSTITUTION:An oxide film is deposited on a semiconductor substrate 1, an Al wiring layer 3 is formed thereon and a bonding lead 6 is provided in the folowing manner on the Al electrode 4 which becomes a bonding pad to be connected to said Al wiring layer. Namely, an impurity doped, low resistive and water proof polycrystalline Si layer 8 is formed in the thickness of about 5,000Angstrom at the position corresponding to a bonding wire 6 of an oxide film 2, a bonding wire 6 is connected thereto and it is surrounded by an insulating film 5 and 5'. Thereby, if water is adhered for a long period and holes 7, 7' are bored to the electrode 4 around the bonding wire 6, a conductive path is connected through the layer 8 and disconnection is not generated. |
