| 摘要 |
PURPOSE:To improve moisture resistance and thus form a product of high reliability by a method wherein semiconductor oxide glass is interposed between a semiconductor nitride film formed on the surface of a semiconductor element as the final protection film and a resin body. CONSTITUTION:The adhesion property between the resin sealed body 6 is removed by forming the second phosphorous silicate glass (PSG) film 11 on the surface of the plasma nitride film 10. The second PSG film 11 is coated to the thickness of approx. 0.2mum at approx. 400 deg.C by a CVD (chemical vapor deposition), etc. The resin molded body 6 contacts this second PSG film 11 and surrounds it. As the film covering the surface of the plasma nitride film, an SiO2 glass without content of phosphorus can be adhered instead of PSG. By interposing the thin film of PSG or CVD-SiO2 glass between the plasma nitride film the final passivation and the resin molded body, the adhesion property between the both is enhanced, the exfoliation of the resin molded body between the passivation film is not generated, parts as the sump of water infiltrated through the resin molded body, etc. are eliminated, and accordingly moisture resistance can be improved. |
