| 摘要 |
PURPOSE:To obtain an Se-Bi photoreceptor high in acceptance potential and low in residual potential, by vapor depositing an Se-Bi photosensitive layer onto a conductive substrate kept at a specified temp. CONSTITUTION:A bell jar 1 contg. a crucible 3 contg. Se, a box-shaped boat 4 contg. Bi, and the conductive substrate 7 held by a holder 6 is evacuated through an exhaust pipe 2 to <=5X10<-5>Torr, and temp. of the holder 6 is regulated to 55- 65 deg.C by a warm water temp. controller 5. The boat 4 is heated to 580- 620 deg.C, and the crucible 3 to 290-330 deg.C to evaporate Bi and Se and deposite the Se-Bi photosensitive layer having 0.1-1.0atm% Bi and 40-60mum thickness onto the substrate 7 in vacuum, and a shutter 8 is closed to stop vapor deposition. The Se-Bi photoreceptor thus obtained has >=10<13>ohm.cm specific resistivity and high sensitivity. |
