| 摘要 |
PURPOSE:To automatically exhaust contaminated substance generated in the protection chamber and reject entrance of it from outside by providing a means for arranging material to be processed and a means for processing it within a vacuum chamber and by allowing reaction gas to flow to the outside through a vacuum chamber. CONSTITUTION:A reactive sputter etching apparatus is formed as indicated below. Namely, a protection chamber is formed by that a quartz plate 21 which covers the lower surface of upper electrode 12 and a quartz plate 23 which covers the surface of lower electrode 13 are provided within a vacuum chamber 11 having an exhaust port 19, the space by surrounded them is closed by a quartz cylindrical portion 22 having an exhaust port 25 and a gas introducing quartz pipe 24 is insertingly provided at the one end of said space. Thereby, the plasma is generated only within the protection chamber and metal is less sprashed by sputtering from the vacuum chamber 11 and electrodes 12, 13. Moreover, the etching gas flows to the outside from the protection chamber without contaminating many substances 20 to be processed placed on the quartz plate 23. |
