| 摘要 |
PURPOSE:To obtain an inter-layer insulating film of multilayer wiring and a passivation film for attaining a high degree of integration and high reliability by forming a SiO2 film onto a phosphorus glass film formed to the whole surface of a semiconductor element. CONSTITUTION:An N type diffusion layer is formed onto a P type Si substrate 1, and insulating films 6 for maintaining insulation with an insulating film 2 for isolating sections among the elements, gate SiO2 films 3, gate electrodes 4 and source or drain electrodes 6 are formed. The phosphorus glass films 7 formed through a chemical vapor growth method and sputtering SiO2 films 8 formed through a bias sputtering method are shaped, and these films 7, 8 are characterized by the flattening of the surfaces. Accordingly, the degradation of the dielectric resistance of the gate SiO2 film through bias sputtering and dry etching is suppressed because the inter-layer insulating films 7, 8 are formed in two layer films of the phosphorus glass films through the chemical vapor growth method and the sputtering SiO2 films by bias sputtering. |
