POLYSILICON FUSE ROM AND MANUFACTURE THEREOF

摘要

PURPOSE:To obtain the poly Si fuse ROM for which programming (cutting) can be performed easily by a method wherein the Si itself is oxidized in advance, and the obtained oxide film is used as a mask when an Al etching is performed. CONSTITUTION:A relatively thick oxide film 4 is formed by superposing a poly Si 3 insulating film 2 located on an Si substrate 1 and also by performing an oxidization, and an electrode window 9 is formed. Then, a PSG5 is covered on the above, and windows 8 and 9 are provided. An Al6 is covered, an etching is performed using SiO2 4 as a stopper, and an electrode 6 is formed. The PSG5 is not exposed at the aperture part, if a final protective film 7 is covered on the above and the window 10 of a protective film 7 is formed inside a PSG window frame 11. According to this constitution, the aperture 8 of the insulating film 4 located at the upper part of a poly Si ROM can be formed without exposing the PSG, which is the cause of generation of corrosion, thereby enabling to perform a programming easily (can be cut using a low current) and to obtain a poly Si fuse ROM having a high reliability.