| 摘要 |
PROBLEM TO BE SOLVED: To increase the property of a Ti/Pt film as a barrier against brazing filler metal without increasing the film thickness and prevent the stripping of the film due to a sintering a process after the formation of the film by depositing, on a contact layer, a Ti layer, a Pt layer, a Ti layer, a Pt layer, and an Au layer in this order as a P electrode of a five-layer structure. SOLUTION: A SiO2 film 10 is formed on a p-GaAs cap layer (contact layer) 9 and then an electrode window 11 is formed by photolithography. As a P electrode, a Ti layer 12-a, a Pt layer 12-b, a Ti layer 12-c, a Pt layer 12-d, and an Au layer 12-e are deposited in order on the p-GaAs cap layer 9. On the side opposite to the cap layer 9, an n-GaAs substrate is formed and then an N electrode is formed under it. Thereafter, in a part where Au is eliminated, the P electrode is bonded onto a heat sink with In brazing filler metal. Since the Ti/Pt layer as a barrier layer against In brazing filler metal are deposited in double layers, the property of the Ti/Pt layer as a barrier against In brazing filler metal is increased and thereby the brazing filler metal is stopped by the barrier layer and is never diffused into the cap layer 9. |
