| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element of high brightness and durability and to simplify the configuration of an electrode. SOLUTION: In a flip-chip III nitride compound semiconductor light-emitting element, a multiplex thick-film positive electrode 120 which connected to a p-type semiconductor layer, reflects light toward a sapphire substrate side comprises, a first metal layer 11 comprising rhodium(Rh), platinum(Pt), or an alloy of them, a second metal layer 112 of gold (Au), and a third metal layer 113 of titanium(Ti) or chromium(Cr). Thus, a positive electrode of high reflectivity is provided. The multiplex thick-film positive electrode 120 does not corrode with infiltration of water content, etc., for superior durability. Thus, a region a which covers a protective layer 130 is less, the configuration of electrode is simplified, providing a light-emitting element which requires no wire bonding. |
