发明名称 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To suppress a fault and to incorporate good optical characteristics by constituting a multilayer structure of a first crystal layer constituted of a surface not parallel to a surface of a substrate, and a second crystal layer made of a compound having different lattice constant from that of the first layer. SOLUTION: A low temperature buffer layer 2 is arranged parallel to a flat surface of a sapphire board 1 on the board 1. A first crystal layer 3 in which a substantially weight-like crystal surrounded by a surface not parallel to the board 1 is insularly irregularly distributed is arranged on the layer 2. Further, the layer 3 and a second crystal layer 4 mad of a semiconductor crystal having a different lattice constant from that of the layer 3 is arranged on the layer 3. The layer 4 is flattened so that the roughed surface of the layer 3 again becomes the board 1. Further, an n-type clad layer 5, an active layer 6, a p-type contact layer 8 are sequentially distributed thereon, and a p-type electrode 9 and an n-type electrode are distributed.
申请公布号 JP2000183464(A) 申请公布日期 2000.06.30
申请号 JP19980354318 申请日期 1998.12.14
申请人 PIONEER ELECTRONIC CORP 发明人 OTA HIROYUKI;WATANABE ATSUSHI;TANAKA TOSHIYUKI
分类号 H01L21/205;H01L33/12;H01L33/22;H01L33/32;H01S5/00;H01S5/02;H01S5/32;H01S5/323 主分类号 H01L21/205
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