| 摘要 |
PURPOSE:To make it possible to improve the yield rate of products, by removing metal films, which are partially formed on an insulating film that is left at the side wall part of a gate electrode. CONSTITUTION:A field oxide film 22 and a gate oxide film 23 are formed on a P type single crystal silicon substrate 21. A gate electrode 24 comprising phosphorus doped polycrystal silicon is formed. An N<+> type source region 25 and a drain region 25 are formed by an ion implantation method. As a first insulating film, e.g. a silicon dioxide film 26 is deposited. Thereafter, as a second material film, a silicon nitride film 27 is deposited on the first insulating film. By etching, multilayer films comprising the silicon dioxide film 26 and the silicon nitride film 27 are made to remain at the side wall part of the gate oxide electrode. Metal films 28 are selectively grown on the surfaces of exposed polycrystal silicon gate electrode, a source, and a drain. By selectively etching the silicon nitride film 27, a tungsten film, which is grown on a part of the silicon nitride film can be removed at the same time. |
