| 摘要 |
PURPOSE:To keep a stoiciometrical composition and the concentration distribution of an impurity element constant at all times by each supplying a metal melted liquid with a constitutive element having high vapor pressure and the impurity element from the compound semiconductor and a bulk metal placed onto the melt metal liquid. CONSTITUTION:A Ga melted liquid 11 is entered into a first vessel 12 made of carbon, the bottom thereof has a large number of through-holes, and As or GaAs and Cr are melted previously in said Ga melted liquid up to solubility at an at least heat-treatment temperature at said temperature. GaAs 13 And the bulk 14 of Cr are placed onto the Ga-melted liquid 11 in which As and Cr dissolve up to their solubility, and an oxide film on the surface of the Ga melted liquid is removed through heat treatment in a hydrogen gas current. On the other hand, a semi-insulating GaAs wafer 16 of be thermally treated is entered into a second vessel 15 made of carbon, and the second vessel 15 is covered with the first vessel 12. Space 17 surrounded by the first and second vessels and the Ga melted liquid is replaced previously with hydrogen at that time. Lastly, the device is heated, and the wafer is thermally treated. |
