发明名称 CIRCUITRY FOR PROTECTING A SEMICONDUCTOR DEVICE AGAINST STATIC ELECTRICITY
摘要 In a semiconductor device, such as a bipolar integrated circuit, an input element (12) requires protection, against possible damage by static electricity, by means capable of acting more rapidly and with less capacitance than a simple diode. <??>Such means are provided by a PNP-transistor (16), having its emitter connected to an electrical reference potential point (14) of the device, and an NPN-transistor (17) having its emitter connected to a signal input point (10) of the input element (12), and having its collector and base connected respectively to the base and collector of the PNP-transistor (16), there being a resistive connection (18) between the respective bases of the two transistors (16,17).
申请公布号 DE3065333(D1) 申请公布日期 1983.11.17
申请号 DE19803065333 申请日期 1980.12.23
申请人 FUJITSU LIMITED 发明人 KOKADO, MASAYUKI;SUMI, HEDEZI
分类号 H01L27/06;H01L21/331;H01L27/02;H01L27/07;H01L27/08;H01L29/73;H03K17/0812;(IPC1-7):H01L27/02;H02H9/04 主分类号 H01L27/06
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