| 摘要 |
PURPOSE:To prevent adverse effect on molecular beam epitaxial growth crystal of the gas released from heater by providing a heater cover covering the opposing part to the path of gas introduced to a heater. CONSTITUTION:A heater cover 10 which is closed arranged to the opening end of liner 3 and covers a heater 4 when viewed from the molecular beam extracting port 9. The AsH3 gas introduced as indicated by the arrow mark from the gas inlet 2 is guided to the heater 4 by the liner 3 and thermally decomposed, generating As molecular. The generated As molecular is emitted to the substrate surface for epitaxial growth from the extracting port 9. In this case, a cover 10 is provided and therefore the harmful gas molecular emitted from the heater 4 is not directly emitted to the substrate surface for epitaxial growth through the extracting port 9 and accordingly entrance to the molecular beam epitaxial growth GaAs crystal can be reduced drastically. |
