| 摘要 |
PURPOSE:To prevent the over-etching of an electrode lead-out aperture provided on the second layer Si wiring by a method wherein the electric connection between the first semiconductor layer having one conductivity type and the second semiconductor layer having conductivity type reverse to that conductivity type is performed by interposing a metallic thin film between the first and second semiconductor layers. CONSTITUTION:The electric connection between the multi-layer Si wirings of different conductivity types is performed via the metallic thin film wiring, e.g. molybdenum of high melting temperature, which is provided between the Si wiring layers of different conductivity types at the part of Si wiring superposition. Thereby, the electrode take-out aperture provided on the first layer Si wiring is connected electrically to the second layer Si wiring, always after once being connected electrically to the metallic thin film wiring. Thus, the element can be changed into high integration, since the depth of the electrode lead-out aperture provided on the first layer Si wiring and the distance from the electrode lead-out aperture provided on the second layer Si wiring can be formed equal. |
