发明名称 High voltage circuits in low voltage CMOS process.
摘要 <p>A CMOS push-pull output buffer (171) ist constructed with a plurality of N channel transistors (74, 75, 76) and a plurality of P channel transistors (71, 72, 73) connected in series. The voltages applied to the gates of the N channel transistors and P channel transistors are selected to divide the high voltage (+V) substantially equally across the P channel transistors when the P channel transistors are turned off, and substantially evenly divide the high voltage across the N channel transistors when the N channel transistors are turned off.</p><p>In another embodiment, selected ones of the N channel and P channel transistors are formed to have a high drain to bulk breakdown voltage.</p><p>In another embodiment, a plurality of N channel and a plurality of P channel transistors are connected in series and driven by a single ended control voltage, thus providing a first stage which drives a second stage having a plurality of P channel transistors and a plurality of N channel transistors which provide the high voltage output voltage.</p><p>In another embodiment, the first stage is driven by a single-ended control voltage and serves to drive a second stage comprising a plurality of N channel transistors and a plurality of bipolar transistors, whereby said second stage provides the high voltage output signal.</p>
申请公布号 EP0094143(A1) 申请公布日期 1983.11.16
申请号 EP19830301231 申请日期 1983.03.08
申请人 AMERICAN MICROSYSTEMS, INCORPORATED 发明人 BARLOW, ALLEN R.;PETERSEN, COREY
分类号 H01L27/092;H01L21/8234;H01L21/8238;H01L27/08;H01L27/088;H01L27/118;H03F3/42;H03K19/0185;H03K19/08;H03K19/0944;H03K19/0948;(IPC1-7):03K17/10;03F3/42 主分类号 H01L27/092
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