| 摘要 |
PURPOSE:To prevent SiO2 insulation film on Al-Cu sheet from deterioration of voltage resistant property, by a method wherein Al-Cu sheet is formed and then heat treatment is performed at a temperature higher than maximum temperature of the subsequent process by about 40 deg.C. CONSTITUTION:On a garnet wafer 1, Al-Cu is evaporated 0.2mum as a lead conductor 2 for permalloy detector and pattern is formed by anodic oxidation method. A permalloy detector 3 is formed and then the wafer 1 is treated by heat at 520 deg.C within Ar atmosphere. CVD SiO2 film 4 is formed 0.15mum at 400 deg.C, and a window is bored only at pad part for bonding. Al-Cu is patterned as a first transfer conductor layer 5, and CVD SiO2 film 6 is formed at 400 deg.C. Likewise, a second transfer conductor layer 7, CVD SiO2 film 8 and a bubble stretch layer 9 are formed. Heat treatment is performed at 440 deg.C being higher than maximum temperature of the subsequent process by 40 deg.C, and then SiO2 insulation layer 10 is applied by CVD method at lower temperature of 400 deg.C and an upper wiring is formed thereon. |
