| 摘要 |
A process for gettering defects in a semiconductor is provided. The process comprises using a laser beam to drive a dopant material into a melted non-active surface of a semiconductor device, followed by heating the semiconductor to drive defects to traps formed by the dopant. The process creates in the bulk of the semiconductor strain fields that not only trap defects, which would otherwise degrade device performance, but also hold the defects during subsequent processing steps.
|
