| 摘要 |
PURPOSE:To grow an active layer with uniformity and little defect when the active layer of laser is as thin as 500Angstrom , by a method wherein small amount of impurity is added to growing solution of the active layer. CONSTITUTION:Crystal for semiconductor laser using GaAs or GaAlAs and having active layer thickness ranging 600-300Angstrom is grown using Ga as a solvent. In this process, the active layer growing solution per Ga 1g is added by Sn ranging 100-200mg, In ranging 50-100mg or Sb ranging 10-25mg. Thus the semiconductor layer is significantly improved in property and life. Moreover, since the active layer is added by only small amount of Sn, In, Sb, the practical use is quite easy. |
