| 摘要 |
PURPOSE:To reduce the value of oscillation threshold current and thus obtain a high reliability by a method wherein the element is formed in a structure of internal current stricture regardless of the conductivity type of substrate crystal. CONSTITUTION:A P-GaAs layer 2 and an N-GaAs layer 3 are formed on an N- GaAs substrate 1 by a liquid phase growing method. Next, a groove 4 is provided in a stripe shape by a photo lithography process, and a P-Ga1-xAlxAs clad layer 5, an undoped Ga1-yAlyAs active layer 6, an N-Ga1-xAlxAs clad layer 7, and an N-GaAs cap layer 8 are grown thereon. Then, using the mask of Al2O3- SiO2, Zn is selectively diffused at a part until it reaches the P-GaAs layer 2. The clearance between an active region and a Zn diffused region 9 is etched to the layer 3, and protected with an SiO2 film 11. Finally, Ti-Pa-Au is evaporated as a surface P-side electrode 12, and AuGeNi-Pd-Au as an N-side electrode 13. |
