发明名称 Electrostatic bonded, silicon capacitive pressure transducer
摘要 A plurality of silicon pressure transducers 10 are formed by processing two conductive silicon wafers 11, 14, one of the wafers including a layer of borosilicate glass 32, a thin portion of which 17 is on the surface 12 of one of the plates of a capacitor formed by field-assisted bonding together of the two wafers, the thin layer of borosilicate glass avoiding arcing during the field-assisted bonding process.
申请公布号 US4415948(A) 申请公布日期 1983.11.15
申请号 US19810310597 申请日期 1981.10.13
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 GRANTHAM, DANIEL H.;SWINDAL, JAMES L.
分类号 G01L9/12;G01L9/00;H01L29/84;H04R19/00;(IPC1-7):H01G7/00 主分类号 G01L9/12
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