| 摘要 |
PURPOSE:To obtain a blank giving a hard photomask for manufacturing a semiconductor integrated circuit at a high etching speed with superior productivity, by forming a chromium layer contg. carbon and a chromium oxide layer on a substrate. CONSTITUTION:Chromium is deposited on a substrate by vapor deposition or sputtering in an atmosphere contg. a compound having carbon in the molecule such as methane or acetylene to form a chromium layer contg. about 0.001- 30wt% carbon, and a chromium oxide layer is formed on the chromium layer to obtain a blank for a photomask. Carbon may be also contained in the chromium oxide layer A. photoresist layer is formed on the blank, imagewise exposed, and developed to imagewise disclose the suface of the blank. The chromium oxide layer and the chromium layer are then dry-etched to manufacture a hard mask for manufacturing a semiconductor integrated circuit, etc. |
