| 摘要 |
PURPOSE:To improve the yield of semiconductors and reduce their production cost by such an arrangement wherein the necessity for complicated photoresist process is eliminated by selectively irradiating laser light rays on a thin film in a gaseous atmosphere containing an ingredient which functions as an etchant of the thin film when activated. CONSTITUTION:A film 2 of SiO2 is formed on the main surface of a wafer 1 in steam atmosphere, and the wafer is placed in CF4 atmosphere containing several % of O2 and a laser light 4 of which beam diameter is converged is vertically irradiated on the film 2. The laser light 4 scans specific areas on the film 2 according to a pattern diagram programmed in advance. At a beam spot to which the laser light 4 was irradiated, the temperature of its surface rises and excites surrounding CF4 and locally generates F. The F reacts preferentially with the film 2 of high temperature to which the light 4 was irradiated and becomes a volatile substance and it performs etching and eventually forms a window hole 5. |
