| 摘要 |
A method for manufacturing a semiconductive device comprising: exposing a part of the surface of an n-type semiconductive substrate and covering the other part with an oxide film; partially providing the exposed part of the n-type semiconductive film with a film comprising a nitrided film and a polycrystalline silicon; doping boron through the exposed part of the n-type semiconductive substrate and the film provided on the same to thereby selectively form a p-type base region within the n-type semiconductive substrate; and, doping phosphorus or arsenic through the film on the exposed part of the n-type semiconductive substrate to thereby selectively form an collector ohmic region within the p-type base region.
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