发明名称 Multiplexed MOS multiaccess memory system
摘要 Multiaccess memory modules are each connected by means of a bus to a system address multiplexer and to a system data multiplexer/demultiplexer. Each module includes a multiaccess memory connected to the system address multiplexer through a component address demultiplexer and a single bus for being addressed. Each multiaccess memory is also connected to the system data multiplexer/demultiplexer through a component data multiplexer/demultiplexer and a single bus for reading or sensing the memory and writing data into the memory. The memory cells of the multiaccess memory components consist of capacitor storage cells, also known as metal oxide silicon (semiconductor) (MOS) capacitors.
申请公布号 US4415991(A) 申请公布日期 1983.11.15
申请号 US19810276439 申请日期 1981.06.22
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 CHU, WESLEY W.;HIBBITS, DAVID G.
分类号 G11C8/16;(IPC1-7):G11C13/00 主分类号 G11C8/16
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