| 摘要 |
PURPOSE:To enable to take out electric potential of a substrate without increasing any process by a method wherein an electrode region having the parts to make contact between an outside electrode taking out metal formed on the surface of a semiconductor substrate and diffusion regions, and being the same conductive type with said semiconductor substrate in accordance with the junction between the aforementioned metal and the semiconductor substrate is provided to function as the substrate electric potential control electrode. CONSTITUTION:At the MOS transistors formed at both the edge parts A, B of a poly-silicon mask 1 by using mask construction formed by stacking a diffusion mask 2, a contact mask 3 and an aluminum electrode mask 4, an aluminum- silicon alloy grows in both the depth direction and the lateral direction of the substrate 17 at the boundary faces between the N type diffusion regions 12, 13 and the poly-silicon gate 11, and the grown aluminum-silicon alloy parts 15, 16 enable to attain connection between the P type substrate 17. |
