| 摘要 |
PURPOSE:To form the desiredly shaped pattern of a P-N junction face, etc., having high yield and at a high speed without affected by probable distribution of impurities to be generated according to a diffusion treatment by a method wherein the prescribed regions of a layer formed with a first structure material are etched to be removed, and a layer consisting of a second structure material is laminated thereon containing the prescribed regions thereof to construct interfaces to form plane demarcations of the respective structure materials. CONSTITUTION:Electronic elements 2 are formed at the prescribed positions of the surface layer part of a semiconductor wafer 1 according to minutely processing technique, etc., and the protective film 3 consisting of an oxide film of SiO2, etc., is formed on the surface thereof. The protective film 3 at the upper parts of the elements 2 are etched to be removed, and concaves 4 are formed. After then, the conductor layer 5 is formed on the surfaces of the elements 2 at the concaves 4 and on the surface of the film 3. Then the part of the layer 5 other than the parts of the concaves 4 are etched to be removed using the mask the same with the mask used when the concaves 4 are formed. Accordingly, conductor layers 5a-5c to connect the elements 2 formed in the wafer 1 are laminatedly formed, and each electronic element 2 is wired in three dimentions by each conductor layer. At this case, size of the resist film, size of the windows of the mask are determined considering side etching. |
