| 摘要 |
PURPOSE:To provide a semiconductor vapor growth apparatus which is capable of obtaining a multi-layer structure having sharp and purified interfaces through free control of composition and impurity concentration which may be realized by the multiple growth chambers method and facilitates application of a large area substrate and introduction of substrate rotating mechanism. CONSTITUTION:In case a gas exchange mechanism 10 is provided at the location indicated in the figure, the first growth gas 1 is supplied to a crystal growth chamber 6 as indicated by an arrow mark of solid line, while the second growth gas 2 flows passing the outside of crystal growth chamber 6 as indicated by an arrow mark of broken line. Since the outlets of a pair of supply tubes are located on a single circumference, the first growth gas can be exhausted as the exhaust gas 20 to the outside of crystal growth chamber and the second growth gas can be supplied to the crystal growth chamber by rotating the gas exchange mechanism 10. The maximum angle required for exchanging gas is 180 deg. and the time required is within one second. The volume at the up-stream area on the substrate in the gas exchange mechanism can be made sufficiently small and very sharp interface which is equivalent to that obtained by the multiple growth chambers method can also be obtained. |
