| 摘要 |
PURPOSE:To practically manufacture many masks for exposure by X-ray with good transfer accuracy from a sheet of original mask and attain improvement of throughput by utilizing an X-ray mask having a low contrast to the wavelength of X-ray used for manufacturing a device as the original mask and by duplicating a pattern from the original mask using the synchrotron X-ray. CONSTITUTION:An X-ray mask of which Au absorbing pattern thickness is as comparatively thin as several thousands Angstrom is manufactured as an original mask. The X-ray mask having a thin Au absorbing pattern can be usually manufactured with excellent size accuracy. The parallel and extensive soft X-ray 22 is extracted from the synchrotron orbit irradiation beam source 21 and the duplication X-ray exposing mask 24 is manufactured with the original mask 23 used as the mask. Since the X-ray is irradiated in parallel, the X-ray is accurately focused without any deviation and simultaneously a large allowance is given to the gap between the mask and wafer. |
