| 摘要 |
PURPOSE:To form a vapor deposition film on a substrate without contamination and damage by disposing the substrate in the position further than the mean free path of the ions and electrons formed by plasma and causing a photoreactive gas near the substrate to react with radiant light. CONSTITUTION:Plasma 4 is formed between cathodes 1a, 1b, 1c and an anode 2 in a vessel 3, and a chemical-reactive gas is introduced into the vessel 3 through an inlet 3a thereof and is released through outlets 3b, 3c. A substrate 5 is disposed in the position further than the mean free path of the ions and electrons formed by the plasma 4. The contamination and damage of the substrate 5 and vapor deposition film are thus prevented and the vapor deposition on a large area is made possible. |
