发明名称 Semiconductor device and fabrication method
摘要 A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semi-conductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the of substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.
申请公布号 US6486541(B2) 申请公布日期 2002.11.26
申请号 US20010953913 申请日期 2001.09.18
申请人 HITACHI, LTD. 发明人 USAMI MITSUO;TASE TAKASHI
分类号 H01L25/00;G06K19/077;H01L21/60;H01L21/68;H01L21/70;H01L21/84;H01L23/00;H01L23/498;H01L23/538;(IPC1-7):H01L23/02 主分类号 H01L25/00
代理机构 代理人
主权项
地址