发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the reliability of the joining of a conductor and a junction pad by removing one part of a multilayer insulating film under the junction pad. CONSTITUTION:First layer Al wiring 7 is formed onto a Si substrate 1 through PSG6 according to a conventional method, PSG8 and a polyimide film 9 are superposed, the film 9 is bored, and Al wiring 12 is attached. However, the polyimide film 9 is removed in the lower region of the junction pad 12. Accordingly, when a metallic wire 14 is joined, the device can be joined excellently because deformation and cracks are not generated in an insulating film.
申请公布号 JPS58192350(A) 申请公布日期 1983.11.09
申请号 JP19820075267 申请日期 1982.05.07
申请人 HITACHI SEISAKUSHO KK 发明人 YOSHIDA IKUO;HIRAIWA ATSUSHI;OOJI YUZURU
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768 主分类号 H01L23/52
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