| 摘要 |
PURPOSE:To obtain a device strong against electrostatic breakdown by a method wherein protecting diodes are connected to the gate electrode on the other side farthest from an electrode whereto an input terminal is connected, in a semiconductor device consisting of IGFET elements and protecting diodes connected to a gate electrode thereof. CONSTITUTION:The following method is used when an end of a gate electrode 2 of a stripe-shape arrangement formed of IGFET elements is connected to protecting diodes 12. When an input terminal 10 with a bonding pad is connected to the gate electrode 2, the protecting diodes 12 are connected to the gate end farthest from the input terminal 10. With the circuit being thus constructed, the gate electrodes arranged between the input terminal 10 and the protecting diodes 12 constitute gate resistance R1-R3, responding adequately to electrostatic breakdown at response speeds as slow as 10nsec and not responding to speeds of several MHz or higher. This provides excellent protection against electrostatic breakdown to be caused by amplitude in alternate currents. |
