| 摘要 |
PURPOSE:To obtain a photoreceptor high in acceptance potential and photosensitivity, by forming the first layer contg. amorphous Se alone or Se and a specified amt. of As, the second layer contg. Se and a specified amt. of Te, and the third layer contg. Se and a specified amt. of Te, or Te and As, each in specified thickness, respectively, on a conductive substrate. CONSTITUTION:The first photosensitive layer 2 of 30-100mum thickness made of amorphous Se alone, or Se contg. 0.5-2wt% As, the 0.1-2mum thick second photosensitive layer 3 made of Se contg. 3-7wt% Te, and the 0.5-6mum thick third photosensitive layr 4 made of Se contg. 10-25wt% Te, or 10-25wt% Te and 0.5-1wt% As on a conductive substrate, thus obtaining an electrophotographic receptor having high photosensitivity to light in 400-700nm wide wavelength range, high acceptance potential, small dark decay, adaptability to a color copying machine, and good durability. |
